Solid-sate image-sensing device

Image analysis – Image sensing

Reexamination Certificate

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Details

C382S324000, C348S294000, C348S300000, C257S444000

Reexamination Certificate

active

07035482

ABSTRACT:
Each unit pixel has a photodiode PD, an amplifying MOS transistor T1having its gate connected to the cathode of the photodiode PD, and a MOS transistor T2having its source connected to the node between the photodiode PD and the gate of the MOS transistor T1. Forming only two MOS transistors other than a photodiode PD functioning as a photoelectric converter helps improve the open-area ratio.

REFERENCES:
patent: 4942474 (1990-07-01), Akimoto et al.
patent: 5241575 (1993-08-01), Miyatake et al.
patent: 5694495 (1997-12-01), Hara et al.
patent: 5898168 (1999-04-01), Gowda et al.
patent: 6239839 (2001-05-01), Matsunaga et al.
patent: 6521926 (2003-02-01), Sasaki
patent: 6798451 (2004-09-01), Suzuki et al.
patent: 10-093066 (1998-04-01), None

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