Methods and systems for lithography process control

Details Methods and systems for lithography process control Methods and systems for lithography process control

2006-01-17

2006-01-17

Rosenberger, Richard A. (Department: 2877)

Optics: measuring and testing

Shape or surface configuration

C356S630000, C356S237500

Reexamination Certificate

active

06987572

ABSTRACT:
Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

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