Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-04-11
2006-04-11
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
07026076
ABSTRACT:
A patterned reflective semiconductor mask (10) uses a multiple layer ARC (24, 26, 28) overlying an absorber stack (22) that overlies a reflective substrate (12, 14). The absorber stack has more than one layer and an upper layer of the absorber stack has a predetermined metal. The multiple layer ARC overlying the upper layer of the absorber stack has layers of nitrogen, oxygen and nitrogen combined with the predetermined metal of the upper layer of the absorber stack. The oxygen layer in the ARC has less metallic properties than the nitrogen layers therein. In one form, an overlying dielectric layer (30) is positioned on the multiple layer ARC to increase light interference. The ARC provides wide bandwidth inspection contrast for extreme ultra-violet (EUV) reticles.
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Yokoyama et al., “The Development of Bilayered TaSiOx-HTPSM (1),” Proceedings of SPIE vol. 4409 (2001), pp. 164-171.
Yokoyama et al., “The Development of Bilayered TaSiOx-HTPSM (2),” Proceedings of SPIE vol. 4409 (2001), pp. 164-171.
Mangat Pawitter
Wasson James R.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
King Robert L.
Rosasco S.
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