Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects
Reexamination Certificate
2006-03-21
2006-03-21
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
C257S900000
Reexamination Certificate
active
07015567
ABSTRACT:
A method produces a semiconductor structure on a substrate. Then, a protective layer is applied to the semiconductor structure. To fabricate a further semiconductor structure that is to be formed on the substrate, intermediate processes, which lead to the formation of cracks in the protective layer, are carried out. The protective layer is repaired with the aid of a repair layer.
REFERENCES:
patent: 4654269 (1987-03-01), Lehrer
patent: 4791073 (1988-12-01), Nagy et al.
patent: 5472370 (1995-12-01), Malshe et al.
patent: 6017614 (2000-01-01), Tsai et al.
patent: 6063514 (2000-05-01), Nishioka et al.
patent: 6177338 (2001-01-01), Liaw et al.
patent: 6265257 (2001-07-01), Hsu et al.
patent: 6762066 (2004-07-01), Holz
patent: 689 18 301 (1989-08-01), None
patent: 0 312 154 (1989-04-01), None
patent: 0 316 550 (1989-05-01), None
patent: 0 327 412 (1994-09-01), None
patent: 02 174269 (1990-07-01), None
patent: 03 213870 (1991-09-01), None
Markstein, H.: “Packaging Ideas”, Electronic Packaging & Production, Feb. 1992, p. 35.
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Prenty Mark V.
Stemer Werner H.
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