Power semiconductor device used for power control

Details Power semiconductor device used for power control Power semiconductor device used for power control

2006-09-05

2006-09-05

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S471000

Reexamination Certificate

active

07102179

ABSTRACT:
A power semiconductor device includes a first semiconductor layer, a second semiconductor layer of a first conductivity type, first and second main electrodes, a control electrode and a third semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer. The first and second main electrodes are formed on the second semiconductor layer separately from each other. The control electrode is formed on the second semiconductor layer between the first and second main electrodes. The third semiconductor layer is formed on the second semiconductor layer between the control electrode and the second main electrode.

REFERENCES:
patent: 6777278 (2004-08-01), Smith
N.-Q. Zhang, et al., IEEE Electron Device Letters, vol. 21, No. 9, pp. 421-423, “High Breakdown GaN HEMT With Overlapping Gate Structure”, Sep. 2000.
S. Karmalkar, et al., IEEE Electron Device Letters, vol. 22, No. 8, pp. 373-375, “Resurf AlGaN/GaN HEMT for High Voltage Power Switching”, Aug. 2001.
U.S. Appl. No. 10/967,166, filed Oct. 19, 2004, Saito et al.
U.S. Appl. No. 10/986,103, filed Nov. 12, 2004, Saito et al.

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