Stacked RF power amplifier

Details Stacked RF power amplifier Stacked RF power amplifier

2006-05-30

2006-05-30

Choe, Henry (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural stages cascaded

C330S307000

Reexamination Certificate

active

07053718

ABSTRACT:
A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.

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patent: 6850120 (2005-02-01), Heima et al.
IBM Whitepaper, “SOI Technology: IBM's Next Advance in Chip Design”, http://www.at400.dk/pubfiles/soipaper.pdf, publication date unknown.
Chew, K.W., “Impact of Deep N-well Implantation on Substrate Noise Coupling and RF Transistor Performance for Systems-on-a-Chip Integration”, 32nd European Solid State Device Research Conference, Sep. 24-26, 2002.

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