Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects
Patent
1992-02-26
1993-03-16
Lusigan, Michael
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
148 333, 427387, 437235, 437243, 257 40, H01L 2934
Patent
active
051949288
ABSTRACT:
Disclosed is a process for passivating a metal surface in a metal/polyimide structure, such as a polyimide layer on a semiconductor substrate containing a pattern of metallization. The process involves the formation of an intermediate layer of a silsesquioxane polymer between the polyimide layer and the substrate. The silsesquioxane layer passivates the metal, to inhibit interaction between the metal surface and the polyimide precursor material used in forming the polyimide, to provide a moisture-resistant and oxidation-resistant interface.
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Cronin John E.
Farrar, Sr. Paul A.
Linde Harold G.
Previti-Kelly Rosemary A.
International Business Machines - Corporation
Lusigan Michael
Sabo William D.
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