Current-in-plane magnetic sensor including a trilayer structure

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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C257S425000, C257S422000

Reexamination Certificate

active

07019371

ABSTRACT:
A current-in-plane magnetic sensor comprises a sensor stack including first and second layers of ferromagnetic material, a first nano-oxide layer positioned adjacent to the first layer of ferromagnetic material, and a layer of non-magnetic material positioned between the first and second layers of ferromagnetic material, wherein the thickness of the non-magnetic layer is selected to provide antiferromagnetic coupling between the first and second ferromagnetic layers, a magnetic field source for biasing the directions of magnetization of the first and second layers of ferromagnetic material in directions approximately 90° with respect to each other, a first lead connected to a first end of the sensor stack, and a second lead connected to a second end of the sensor stack. Disc drives that use the current-in-plane magnetic sensor are also included.

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