Siloxane-based resin and interlayer insulating film for a...

Stock material or miscellaneous articles – Composite – Of silicon containing

Reexamination Certificate

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C525S477000, C528S012000, C528S021000, C528S035000, C528S037000, C427S387000

Reexamination Certificate

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07014917

ABSTRACT:
Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.

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patent: 0 997 497 (2000-03-01), None

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