Shallow trench isolation (STI) region with high-K liner and...

Details Shallow trench isolation (STI) region with high-K liner and... Shallow trench isolation (STI) region with high-K liner and...

2006-01-10

2006-01-10

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S436000, C438S435000, C438S437000

Reexamination Certificate

active

06984569

ABSTRACT:
A shallow trench isolation region formed in a layer of semiconductor material. The shallow trench isolation region includes a trench formed in the layer of semiconductor material, the trench being defined by sidewalls and a bottom; a liner within the trench formed from a high-K material, the liner conforming to the sidewalls and bottom of the trench; and a fill section made from isolating material, and disposed within and conforming to the high-K liner. A method of forming the shallow trench isolation region is also disclosed.

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