Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2006-03-28
2006-03-28
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S784000
Reexamination Certificate
active
07019398
ABSTRACT:
Disclosed is a semiconductor device comprises a substrate, a wiring formed into a predetermined pattern above the substrate and provided with a pad portion for external connection, an interlayer insulating film formed above the substrate to cover the wiring and provided with a contact hole for a contact to a pad portion of the wiring, and a cap layer formed on the interlayer insulating film and electrically connected, via the contact hole formed in the interlayer insulating film, with the pad portion of the wiring, wherein one end portion of the cap layer is positioned at the contact hole and the cap layer is extended from the contact hole in a direction which is different from that of the pattern of the wiring.
REFERENCES:
patent: 5659201 (1997-08-01), Wollesen
patent: 6522021 (2003-02-01), Sakihama et al.
patent: 2001/0051426 (2001-12-01), Pozder et al.
patent: 4-139894 (1992-05-01), None
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patent: 2001-015516 (2001-01-01), None
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patent: 2002-016065 (2002-01-01), None
Notification of Reasons for Rejection: Japanese Patent Application No. 2002-176880 mailed Aug. 3, 2004.
Office Action from the Patent Office of the People's Republic of China, on Jan. 14, 2005, and an English translation thereof.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Nelms David
Nguyen Thinh T
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