Doped semiconductor powder and preparation thereof

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant

Reexamination Certificate

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C257S611000

Reexamination Certificate

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07081664

ABSTRACT:
The invention provides a doped semiconductor powder comprising nanocrystals of a group IV semiconductor and a rare earth element, the rare earth element being dispersed on the surface of the group IV semiconductor nanocrystals. The invention also provides processes for the preparation of the above doped semiconductor powder, and a composite material comprising a matrix in which is dispersed a doped semiconductor powder.

REFERENCES:
patent: 5422907 (1995-06-01), Bhargava
patent: 5434878 (1995-07-01), Lawandy
patent: 5637258 (1997-06-01), Goldburt et al.
patent: 5646425 (1997-07-01), Beach
patent: 5667905 (1997-09-01), Campisano et al.
patent: 6255669 (2001-07-01), Birkhahn et al.
patent: 6277664 (2001-08-01), Lozykowski et al.
patent: 6294401 (2001-09-01), Jacobson et al.
patent: 6656588 (2003-12-01), Laine et al.
patent: 2002/0017657 (2002-02-01), Coffa et al.
patent: 2002/0048289 (2002-04-01), Atanackovic et al.
patent: 2002/0070121 (2002-06-01), Nayfeh et al.
patent: 2002/0074565 (2002-06-01), Flagan et al.
patent: 2002/0163003 (2002-11-01), Dal Negro et al.
patent: 2003/0034486 (2003-02-01), Korgel
patent: 2004/0183087 (2004-09-01), Gardner
patent: 101 04 193 (2002-08-01), None
patent: 0 650 200 (1995-04-01), None
patent: 1 134 799 (2001-09-01), None
patent: 2001 203382 (2001-07-01), None
patent: 2061815 (2002-01-01), None
patent: WO 02/061815 (2002-08-01), None
A. Nakajima, et al.; Microstructure and Optical Absorption Properties OS Si Nanocrystals Fabricated With Low-Pressure Chemical-Vapor Deposition; J. Appl. Phys., vol. 80, No. 7, Oct. 1, 1996, pp. 4006-4011.
Jeong Sook Ha, et al.; Er3+Photoluminescence From Er-Doped Amorphous SiOxFilms Prepared by Pulsed Laser Deposition at Room Temperature: The Effects of Oxygen Concentration; Applied Physics Letters, vol. 82, No. 20, May 19, 2003, pp. 3436-3438.
Jung H. Shin, et al.; Effect of Hydrogenation on Room-Temperature 1.54 μm Er3+Photoluminescent Properties of Erbium-Doped Silicon-Rich Silicon Oxide; Applied Physics Letters, vol. 73, No. 25, Dec. 21, 1998, pp. 3647-3649.
T.G. Kim, et al.; Controlling the Formation of Luminescent Si Nanocrystals in Plasma-Enhanced Chemical Vapor Deposited Silicon-Rich Silicon Oxide Through Ion Irradiation; Journal of Applied Physics, vol. 91, No. 5, Mar. 1, 2002, pp. 3236-3242.
M. Li, et al.; Ellipsometry Investigation of Nucleation and Growth of Electron Cyclotron Resonance Plasma Deposited Silicon Films; J. Vac. Sci. Technol. A 11(4) Jul./Aug. 1993, pp. 1686-1691.
H.S. Bae, et al.; Electroluminescence Mechanism in SiOxLayers Containing Radiative Centers; Journal of Applied Physics, vol. 91, No. 7, Apr. 1, 2002, pp. 4078-4081.
Minoru Fujii, et al.; 1.54 μm Photoluminescence of Er3+Doped Into SiO2Films Containing Si Nanocrystals: Evidence for Energy Transfer From Si Nanocrystals to Er3+; Appl. Phys. Lett. 71 (9), Sep. 1997, pp. 1198-1200.
Giorgia Franzò, et al.; Enhanced Rare Earth Luminescence in Silicon Nanocrystals; Materials Science and Engineering B69-70, 2000, pp. 335-339.
Giorgia Franzò, et al.; Er3+Ions-Si Nanocrystals Interactions and Their Effects on the Luminescence Properties; Applied Physics Letters, vol. 76, No. 16, Apr. 17, 2000, pp. 2167-2169.
Se-Young Seo, and Jung H. Shin; Exciton-Erbium Coupling and the Excitation Dynamics of Er3+in Erbium-Doped Silicon-Rich Silicon Oxide; Applied Physics Letters, vol. 78, No. 18, Apr. 30, 2001, pp. 2709-2711.
Jung H. Shin, et al.; Photoluminescence Excitation Spectroscopy of Erbium-Doped Silicon-Rich Silicon Oxide; Applied Physics Letters, vol. 76, No. 15, Apr. 10, 2000, pp. 1999-2001.
F. Iacona, et al.; Electroluminescence at 1.54 μm in Er-Doped Si Nanocluster-Based Devices; Applied Physics Letters, vol. 81, No. 17, Oct. 21, 2002, pp. 3242-3244.
Minoru Fujii, et al.; Photoluminescence From SiO2Films Containing Si Nanocrystals and Er: Effects of Nanocrystalline Size on the Photoluminescence Efficiency of Er3+; Journal of Applied Physics, vol. 84, No. 8, Oct. 15, 1998, pp. 4525-4531.
A.J. Kenyon, et al.; Luminescence From Erbium-Doped Silicon Nanocrystals in Silica: Excitation Mechanisms; Journal of Applied Physics, vol. 91, No. 1, Jan. 1, 2002, pp. 367-374.
J. De la Torre, et al.; Optical and Electrical Transport Mechanisms in Si-Nanocrystal-Based LEDs; Elsevier Science B.V., Physica E, 2002, pp. 1-3.
Jung H. Shin, et al.; Composition Dependence of Room Temperature 1.54 μm Er3+Luminescence From Erbium-Doped Silicon: Oxygen Thin Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition; Applied Physics Letters, vol. 72, No. 9, Mar. 2, 1998, pp. 1092-1094.
P.G. Kik, et al.; Strong Exciton-Erbium Coupling in Si Nanocrystal-Doped SiO2; Applied Physics Letters, vol. 76, No. 17, Apr. 24, 2000, pp. 2325-2327.
G. Franzò, et al.; Electroluminescence of Silicon Nanocrystals in MOS Structures; Appl. Phys. A, Materials Science & Processing, 74, (2002), pp. 1-5.
A. Irrera, et al.; Excitation and De-Excitation Properties of Silicon Quantrum Dots Under Electrical Pumping; Applied Physics Letters, vol. 81, No. 10, Sep. 2, 2002, pp. 1866-1868.
P.S. Andry, et al.; Growth of Er-Doped Silicon Using Metalorganics by Plasma-Enhanced Chemical Vapor Deposition; J. Appl. Phys. 80 (1), Jul. 1, 1996, pp. 551-558.
Kei Watanabe, et al.; Resonant Excitation of Er3+by the Energy Transfer From Si Nanocrystals; Journal of Applied Physics, vol. 90, No. 9, Nov. 1, 2001, pp. 4761-4767.
J. De la Torre, et al.; Optical Properties of Silicon Nanocrystal LEDs; Elsevier Science B.V., Physica E, 2002, pp. 326-330.
Orlov, L.K. et al., Comparitive Analysis of Light Emmitting Properties of Si:Er and Ge/Si1−xGexEpitaxial Structures Obtained by MBE Method.Gettering and Defect Engineering in Semiconductor Technology, Solid State Phenomena(Formerly Part B of Diffusion and Defect Data[0377-6883]). vol. 69 until 70, 1999. pp. 377-382. ISSN:1012-0394.
Shin, J.H. et al., Controlling the Quantum Effects and Erbium-Carrier Interaction Using Si/SiO2Superlattices.Proceedings of the SPIE. vol. 4282, Jan. 1, 2001. Bellingham, VA United States of America. pp. 142-152.
Yun, F. et al., Room Temperature Single-Electron Narrow-Channel Memory With Siliconnanodots Embedded in SiO2Matrix.Japanese Journal of Applied Physics.Publication Office Japanese Journal of Applied Physics. vol. 39, No. 8A Part II. Aug. 1, 2000. Tokyo, Japan. pp. L792-L795.
Rozo, C. et al., Spectoscopic Study of Rare Earth Doped Nano-Crystalline Silicon in SiO2 Films.Quantum Confined Semiconductor Nanostructures. Symposium(Mater. Res. Soc. Symposium Proceedingsvol. 737) Mater Res. Soc Warrendale, Pa, USA, 2003. pp. 517-522, XP 002310621. ISBN:1-55899-674-5.
Fujii, Minoru et al., Excitation of Intra-4ƒ Shell Luminescence of Yb3+by Energy Transfer From Si Nanocrystals.Applied Physics Letters.American Institute of Physics. New York, USA. vol. 73, No. 21. Nov. 23, 1998, pp. 3108-3110, XP 012021485. ISSN: 0003-6951.
Pacifici, D. et al., Erbium-Doped Si Nanocrystals: Optical Properties and Electroluminescent Devices.Physica E.Elsevier netherlands, vol. 16, No. 3-4, Mar. 2003. pp. 331-340, XP 002310622. ISSN: 1386-9477.

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