Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2006-07-18
2006-07-18
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S091000, C257S099000, C257S709000, C257S779000, C438S612000, C438S666000
Reexamination Certificate
active
07078730
ABSTRACT:
To offer a semiconductor light-emitting device capable of preventing a short circuit failure caused by adhesion of the solder, change of a beam shape, and decrease of a beam output. A semiconductor laser device1is manufactured by overlaying a laser chip having a p-side electrode and a n-side electrode in a crystalline substrate and a mounting plate having a first solder film and a second solder film in a supporting body. The laser chip has a level difference A such that the p-side electrode is projected beyond the n-side electrode. The mounting plate has a level difference B such that the first solder film is projected beyond the second solder film. The level difference B of the mounting plate is determined as higher than the level difference A of the laser chip. Therefore, when the mounting plate is overlaid to the laser chip, first, the n-side electrode contacts with the second solder film, and then, the p-side electrode contacts the first solder film. Accordingly, even if the solder is squeezed out in the vicinity of the n-side electrode, the solder is hardly squeezed out in the vicinity of the p-side electrode. The pn junction part is generally positioned in the vicinity of the p-side electrode, which controls the solder to adhesion to the pn junction part.
REFERENCES:
patent: 3622906 (1971-11-01), Nyul
patent: 4143385 (1979-03-01), Miyoshi et al.
patent: 4542401 (1985-09-01), Sekiba
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 5636234 (1997-06-01), Takagi
patent: 5770856 (1998-06-01), Fillard et al.
patent: 6054716 (2000-04-01), Sonobe et al.
patent: 6136626 (2000-10-01), Kidoguchi et al.
patent: 6169294 (2001-01-01), Biing-Jye et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6281032 (2001-08-01), Matsuda et al.
patent: 6281524 (2001-08-01), Yamamoto et al.
patent: 6281526 (2001-08-01), Nitta et al.
patent: 6323059 (2001-11-01), Yoshida et al.
patent: 6329605 (2001-12-01), Beroz et al.
patent: 6404792 (2002-06-01), Yamamoto et al.
patent: 6474531 (2002-11-01), Ozawa
patent: 55-009442 (1980-01-01), None
patent: 6-007990 (1994-01-01), None
Kananen Ronald P.
Louie Wai-Sing
Rader & Fishman & Grauer, PLLC
Sony Corporation
LandOfFree
Semiconductor light-emitting device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light-emitting device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3530422