Process for manufacturing a substrate and associated substrate

Details Process for manufacturing a substrate and associated substrate Process for manufacturing a substrate and associated substrate

2006-05-09

2006-05-09

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000, C438S456000, C438S796000

Reexamination Certificate

active

07041577

ABSTRACT:
A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a portion of the first layer is selectively etched substantially to the interface to create an etched zone. A second layer is then bonded to un-etched portions of the first layer to cover the etched zone and to form a closed cavity. The first layer is detached from the temporary support at the weak bond by providing a raised pressure in the cavity.

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W.P. Maszara et al. “Bonding Of Silicon Wafers For Silicon-On-Insulator”, Journal of Applied Physics, vol. 64, p. 4943-4950, (1988).

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