Light absorbing layer producing method

Details Light absorbing layer producing method Light absorbing layer producing method

2006-03-28

2006-03-28

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S584000

Reexamination Certificate

active

07018858

ABSTRACT:
A method of producing a light absorbing layer of CIGS for a solar cell by forming a precursor film on a back electrode and treating the precursor film in a selenium atmosphere, wherein an alkali layer is formed on the back electrode by dipping the back electrode in an aqueous solution containing alkali metals and drying and then a laminated precursor is formed on the alkali layer. By applying this method, the alkali layer whose components of Ia-group elements are diffused into the light absorbing layer to improve power conversion efficiency thereof can be easily formed with no fear of denaturing the back electrode and peeling of the layer at the boundary between the light absorbing layer and the back electrode.

REFERENCES:
patent: 4798660 (1989-01-01), Ermer et al.
patent: 4945079 (1990-07-01), Pedersen et al.
patent: 5422304 (1995-06-01), Kohiki et al.
patent: 5626688 (1997-05-01), Probst et al.
patent: 6346184 (2002-02-01), Sano et al.
patent: 6802953 (2004-10-01), Sano et al.
patent: 6881058 (2005-04-01), Kawano et al.
patent: 8-222750 (1996-08-01), None
patent: 10-135495 (1998-05-01), None
“Growth of Cu(In,Ga) Se2 Thin Films by Coevaporation Using Alkaline Precursors”, Marika Bodeg Ard et al, Thin Solid Films 2000, 361-362.
“Influence of Substrates on the Electrical Properties of Cu(InGa) Se2 Thin Films”, Ruckh et al., IEEE 1994, Dec. 5-9.

Affiliated with

Also associated with

Rating

Light absorbing layer producing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light absorbing layer producing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light absorbing layer producing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3529120