Method and apparatus for implementing a co-axial wire in a...

Details Method and apparatus for implementing a co-axial wire in a... Method and apparatus for implementing a co-axial wire in a...

2006-03-21

2006-03-21

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S660000, C257S662000, C257S664000, C438S731000

Reexamination Certificate

active

07015569

ABSTRACT:
A coaxial shield for a semiconductor chip includes: a top vertical shield wire formed in a top metal layer of a semiconductor chip wherein the top vertical shield wire has a selected length for providing a coaxial shield; a first side shield wire formed in an intermediate metal layer of the semiconductor chip; a first upper via formed in a first dielectric layer of the semiconductor chip that extends lengthwise parallel to the first side shield wire to electrically connect the first side shield wire to the top vertical shield wire along the selected length; a second side shield wire formed in the intermediate metal layer of the semiconductor chip having a length corresponding to the selected length wherein the second side shield wire extends lengthwise parallel to the first side shield wire; and a second upper via formed in the first dielectric layer that extends lengthwise parallel to the second side shield wire to electrically connect the second side shield wire to the top vertical shield wire along the length corresponding to the selected length.

REFERENCES:
patent: 4514749 (1985-04-01), Shoji
patent: 5109168 (1992-04-01), Rusu
patent: 5338897 (1994-08-01), Tsay et al.
patent: 6456117 (2002-09-01), Tanaka
patent: 2002/0075104 (2002-06-01), Kwon et al.

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