High resistivity silicon carbide single crystal

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

Reexamination Certificate

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C117S084000, C117S105000, C117S103000

Reexamination Certificate

active

07018597

ABSTRACT:
The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.

REFERENCES:
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patent: 6218680 (2001-04-01), Carter, Jr. et al.
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N.T. Son et al., Carbon Vacancy-Related Defect in 4H and 6H SiC, Physical Review B, vol. 63, pp. 201201-1-201201-4.
M. Bickermann et al., Incorporation of Boron and Vanadium During PCT growth of 6H-SiC Crystals, Journal of Crystal Growth 233, 2001, pp. 211-218.
T. Dalibor et al., Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy, Phys. Stat. Sol. (a) 162, pp. 199-225.
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