Method of manufacturing LCOS spacers

Details Method of manufacturing LCOS spacers Method of manufacturing LCOS spacers

2006-03-07

2006-03-07

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S048000, C438S149000, C349S155000

Reexamination Certificate

active

07008808

ABSTRACT:
A method for forming a liquid crystal on silicon (LCOS) display spacer and groove in a multi-step etching process including providing silicon substrate including a first overlying dielectric insulating layer and metal pixel electrodes; forming a second dielectric insulating layer over the metal pixel electrodes; forming a hardmask layer over the second dielectric insulating layer; photolithographically patterning a resist layer formed over the hardmask layer and plasma etching the hardmask layer to form an etching mask for etching spacers in the second dielectric insulating layer; carrying out a first plasma etching process to form spacers; removing remaining resist layer portions and polymer etching residues over the process surface; and, carrying out a second plasma etching process to etch grooves between metal pixel electrodes adjacent the spacers.

REFERENCES:
patent: 5764324 (1998-06-01), Lu et al.
patent: 2002/0047967 (2002-04-01), Jie et al.
patent: 2002/0149734 (2002-10-01), Melnik et al.
patent: 2003/0076461 (2003-04-01), Liu et al.
patent: 2003/0138982 (2003-07-01), Wei et al.

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