Structure of solid-state image sensing devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257231, 257245, 257250, 35821329, H01L 2978, H01L 2702, H01L 2714

Patent

active

051947510

ABSTRACT:
A structure of a solid-state image sensing device applicable to an HDVS is disclosed in which at least one of the transmission paths for the drive pulses used for driving vertical registers and horizontal registers can achieve reduced propagation delays and signal distortions of the drive pulses. In the first preferred embodiment, a control gate for controlling the transfer of signal charges between the horizontal registers is constituted by a first polycrystalline silicon layer, a metal wiring layer is formed and is connected to the first polycrystalline silicon layer via contact regions and transfer electrodes provided for driving the horizontal registers are constituted by second and third semiconductor layers placed between the first polycrystalline silicon layer and the metal wiring layer without contacting the contact regions. In the second preferred embodiment, the control gate is formed of a wiring layer placed above the semiconductor layers constituting the transfer electrodes of the horizontal registers. In the third preferred embodiment, shunt wiring films are formed independently on the transfer electrodes for the vertical registers of an image portion and on the transfer electrodes for those of a storage portion.

REFERENCES:
patent: 4230954 (1980-01-01), Heller
patent: 4733302 (1988-03-01), Kim-shita et al.
patent: 4754311 (1988-06-01), Davids et al.
patent: 4774586 (1988-09-01), Koiki et al.
patent: 4803710 (1987-02-01), Elabd
patent: 4903284 (1990-02-01), Esser
Patent Abstracts of Japan, vol. 12, No. 369 (E-665)[3216], Oct. 4, 1988; & JP-A-63 120 463 (Matsushita Electric Ind. Co., Ltd.) May 24, 1988.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Structure of solid-state image sensing devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure of solid-state image sensing devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of solid-state image sensing devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-352784

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.