Semiconductor device with copper wirings having improved...

Details Semiconductor device with copper wirings having improved... Semiconductor device with copper wirings having improved...

2006-04-18

2006-04-18

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S758000, C257S760000, C257S751000, C257S351000, C257S228000, C257S369000, C257S374000, C257S395000, C257S396000, C257S397000, C257S398000, C257S412000, C257S413000, C257S408000

Reexamination Certificate

active

07030498

ABSTRACT:
A semiconductor device with p-channel MOS transistor having: a gate insulating film of nitrogen-containing silicon oxide; a gate electrode of boron-containing silicon; side wall spacers on side walls of the gate electrode, comprising silicon oxide; an interlayer insulating film having a planarized surface; a wiring trench and a contact via hole formed in the interlayer insulating film; a copper wiring pattern including an underlying barrier layer and an upper level copper region, and filled in the wiring trench; and a silicon carbide layer covering the copper wiring pattern. A semiconductor device has the transistor structure capable of suppressing NBTI deterioration.

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