Single-poly 2-transistor based fuse element

Details Single-poly 2-transistor based fuse element Single-poly 2-transistor based fuse element

2006-07-11

2006-07-11

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S315000, C257S316000, C438S257000, C438S281000, C438S601000

Reexamination Certificate

active

07075127

ABSTRACT:
An electrically programmable transistor fuse having a double-gate arrangement disposed in a single layer of polysilicon in which a first gate is disposed overlapping a portion of a source region and a second gate is insulated from the first gate and disposed overlapping a portion of a drain region. The first gate includes a terminal for receiving an externally applied control signal and the second gate is capacitively couple to the drain region in which a coupling device is included for increasing the capacitive coupling of the second gate and the drain region for enabling reduction in fuse programming voltage.

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Internationl Search Report, International Application No. PCT/EP2004/053138; Apr. 18, 2005, 4 pages.

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