Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-08-02
2005-08-02
Auduong, Gene N. (Department: 2818)
Static information storage and retrieval
Floating gate
Particular connection
C365S185050, C365S185120
Reexamination Certificate
active
06925008
ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor substrate, an element isolation region, a first interconnection, a second interconnection, and a memory cell unit connected between a corresponding one of the first interconnection and a second interconnection. The memory cell unit includes two selection transistors and memory cell transistors of not larger than two. The memory cell transistors are connected between the two selection transistors. The memory cell transistor has a charge storage layer whose side surface lies in the same plane as the side surface of the element isolation regions.
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Ichige Masayuki
Shirota Riichiro
Sugimae Kikuko
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