Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2005-08-09
2005-08-09
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S065000
Reexamination Certificate
active
06927419
ABSTRACT:
A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam38is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.
REFERENCES:
patent: 4113531 (1978-09-01), Zanio et al.
patent: 5512494 (1996-04-01), Tanabe
patent: 5567967 (1996-10-01), Kusumoto
patent: 5705413 (1998-01-01), Harkin et al.
patent: 5731613 (1998-03-01), Yamazaki et al.
patent: 5808318 (1998-09-01), Masumo et al.
patent: 5811328 (1998-09-01), Zang et al.
patent: 5817550 (1998-10-01), Carey et al.
patent: 5930609 (1999-07-01), Young
patent: 6025218 (2000-02-01), Brotherton
patent: 6169013 (2001-01-01), Voutsas
patent: 6246070 (2001-06-01), Yamazaki et al.
patent: 6337236 (2002-01-01), Yamazaki et al.
Kuriyama, H. et al., “High mobility polySi TFT by a new excimer laser annealing method for large electronics”, Dec. 1991, IEEE, pp. 563-566.
Ishihara, R.; “Ultra large growth of Si films on glassy subtrate”, Oct. 1995; IEEE; pp. 1956-1957.
Hara Akito
Sasaki Nobuo
Armstrong Kratz Quintos Hanson & Brooks, LLP
Fujitsu Limited
Nelms David
Nguyen Thinh T
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