Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2005-12-20
2005-12-20
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Format or disposition of elements
C365S063000, C365S226000
Reexamination Certificate
active
06977832
ABSTRACT:
In a multilayer interconnection layer of a mother board and a memory module, a position relationship between a bus interconnection layer and a conductive layer of a power supply layer or a ground layer opposite to the bus interconnection layer is substantially held in not only the mother board but also the memory module and a relationship of multilayer interconnections is unified. As a result, it is possible to reduce disturbance of a return current of a high frequency signal given to the bus interconnection layer, to prevent degradation of quality of a signal waveform caused by the disturbance of the return current, and to prevent unnecessary electromagnetic waves from radiating caused by the disturbance of the return current. When a position relationship between the bus interconnection layer and an opposite conductive layer is not held at a constant, a similar effect is obtained by disposing a bypass capacitor in the vicinity of a portion where a plane of the bus interconnection layer and the conductive layer is switched.
REFERENCES:
patent: 6438012 (2002-08-01), Osaka et al.
patent: 6654270 (2003-11-01), Osaka et al.
patent: 6690612 (2004-02-01), Gall et al.
patent: 6697420 (2004-02-01), Simon et al.
patent: 6771515 (2004-08-01), McCall et al.
patent: 6777262 (2004-08-01), Miyaki et al.
patent: 6846738 (2005-01-01), Forbes et al.
patent: 6847617 (2005-01-01), Borkar et al.
patent: 05-135826 (1993-06-01), None
patent: 09-214076 (1997-08-01), None
patent: 11-068313 (1999-03-01), None
patent: 2001-183422 (2001-07-01), None
Japanese Office Action dated Jun. 16, 2004.
Japanese Office Action with Translation dated Nov. 4, 2004.
Isa Satoshi
Nishio Yoji
Auduong Gene N.
Elpida Memory Inc.
Katten Muchin & Rosenman LLP
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