Vertical-cavity surface emitting laser diode and method for...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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C438S029000, C438S032000, C438S038000, C438S047000, C438S508000, C438S508000, C257SE31099, C257SE31105, C257S083000, C362S084000, C362S612000, C362S800000, C372S098000, C372S103000, C250S21400C, C250S552000

Reexamination Certificate

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06979582

ABSTRACT:
The present invention provides a vertical-cavity surface emitting laser (VCSEL) diode and a method for producing the same. In this method, an n-type and a p-type ohmic contact electrodes are previously disposed, and then two pairs of distributed Bragger reflectors (DBRs) are formed. At last, a permanent metal substrate is plated. According to the present invention, reflectivity of the DBRs can be preserved without damage during rapid thermal annealing, and thus brightness of the laser diode is improved.

REFERENCES:
patent: 2003/0081642 (2003-05-01), Hwang et al.
patent: 2003/0185267 (2003-10-01), Hwang et al.
patent: 2004/0151221 (2004-08-01), Yamamoto et al.
patent: 2005/0013334 (2005-01-01), Watanabe et al.
patent: 62179179 (1987-08-01), None
patent: 06097499 (1994-04-01), None

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