Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-06-07
2005-06-07
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S499000, C257S750000, C257S759000, C257S760000
Reexamination Certificate
active
06903459
ABSTRACT:
A high frequency (HF) semiconductor device includes a semiconductor substrate. An electroconductor layer is provided on the semiconductor substrate. A first insulator layer electrically insulates the electroconductor layer from the semiconductor substrate. N pieces of wires are provided on the semiconductor substrate, and N-phase signals (where N represents a positive integer greater than 2) are fed to the wires. A second insulator layer electrically insulates the wires from the electroconductor layer and the semiconductor substrate. N1pieces of the wires are provided on one side of the electroconductor layer (where N1represents 0 or a positive integer equaling or less than N). N2pieces of the wires are provided on the other side of the electroconductor layer (where N2represents 0 or a positive integer satisfying N1+N2=N).
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Matsushita Electric Industrial Co., LTD.
McDermott Will & Emery LLP
Soward Ida M.
Zarabian Amir
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