Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-11-15
2005-11-15
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S370000
Reexamination Certificate
active
06965133
ABSTRACT:
Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.
REFERENCES:
patent: 4808548 (1989-02-01), Thomas et al.
patent: 5017990 (1991-05-01), Chen et al.
patent: 5106767 (1992-04-01), Comfort et al.
patent: 5144403 (1992-09-01), Chiang et al.
patent: 5439833 (1995-08-01), Hebert et al.
patent: 5580798 (1996-12-01), Grubisich
patent: 5599723 (1997-02-01), Sato
patent: 5607866 (1997-03-01), Sato et al.
patent: 5661046 (1997-08-01), Ilderem et al.
patent: 5940711 (1999-08-01), Zambrano
patent: 5953600 (1999-09-01), Gris
patent: 5986323 (1999-11-01), Zambrano et al.
patent: 5986326 (1999-11-01), Kato
patent: 6028345 (2000-02-01), Johnson
patent: 6049098 (2000-04-01), Sato
patent: 6100152 (2000-08-01), Emons et al.
patent: 6316818 (2001-11-01), Marty et al.
patent: 6465317 (2002-10-01), Marty
patent: 6492238 (2002-12-01), Ahlgren et al.
patent: 6642553 (2003-11-01), Drews et al.
Geiss Peter J.
Khater Marwan H.
Liu Qizhi
Mann Randy W.
Purtell Robert J.
Cao Phat X.
Doan Theresa T.
International Business Machines - Corporation
Sabo, Esq. William D.
Scully Scott Murphy & Presser
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