Method for transferring a bloch line

Static information storage and retrieval – Magnetic shift registers – Thin film

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365 29, G11B 500, G11C 1908

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active

051385716

ABSTRACT:
Method for transferring the Bloch line present in the magnetic wall of the magnetic domain formed in the magnetic thin film, along the magnetic wall is characterized by the steps of forming a predetermined stress distribution along the magnetic wall in the magnetic thin film, positioning the Bloch line to a predetermined position in the magnetic wall in accordance with the stress distribution, and applying a pulsive magnetic field normally to a film plane of the magnetic thin film in synchronism with the formation of the stress distribution. The Bloch line is transferred from the predetermined position to another position by the stress distribution formation step and the magnetic field application step.

REFERENCES:
patent: 4060798 (1977-11-01), Schloemann et al.
patent: 4583200 (1986-04-01), Konishi et al.
IEEE Transactions on Magnetics, "Chip Organization of Bloch Line Memory", T. Suzuki et al., vol. 22, No. 5, Sep. 1986, pp. 784-89.
AIP Conference Proceeding, Magnetism and Magnetic Materials, "Magnetostrictive-Piezoelectric Bubble Detectors", W. Ishak et al., No. 24, pp.558-59, 1974.
Journal of Applied Physics, "Interaction of Domain Walls with Localized Stress Fields in Magnetostrictive Films", J. Dishman et al., vol. 45, No. 9, Sep. 1974, pp.4076-83.

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