Semiconductor LED device and method for manufacturing the same

Details Semiconductor LED device and method for manufacturing the same Semiconductor LED device and method for manufacturing the same

2005-06-28

2005-06-28

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S080000, C257S084000

Reexamination Certificate

active

06911676

ABSTRACT:
A semiconductor LED device in which a reverse p-n junction diode protective element is integrated with a single p-n junction AlGaInN semiconductor LED element having a conventional structure, so that the semiconductor LED device exhibits high resistance to reverse voltage. In accordance with the function of the reverse p-n junction diode protective element, the p-n junction LED element can be securely protected from external static electricity and momentary reverse overvoltage applied thereto. In particular, it is possible to basically eliminate causes of a p-n junction breakage occurring in an LED element due to application of a reverse voltage frequently occurring during a process of the LED element, thereby greatly improving the reliability and yield of the LED element. The p-n junction LED element and the reverse p-n junction diode protective element are integrated with each other on the same substrate such that electrical connection is provided between the p-electrode of the LED element and the n-electrode of the protective element and between the n-electrode of the LED element and the p-electrode of the protective element in accordance with a semiconductor process.

REFERENCES:
patent: 6054716 (2000-04-01), Sonobe
patent: 2002/0028527 (2002-03-01), Maeda et al.
patent: 10-256610 (1998-09-01), None
patent: 010088929 (2001-09-01), None

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