Method of inspecting accuracy in stitching pattern elements

Details Method of inspecting accuracy in stitching pattern elements Method of inspecting accuracy in stitching pattern elements

2005-06-07

2005-06-07

Mehta, Bhavesh M. (Department: 2625)

Image analysis

Applications

Manufacturing or product inspection

C382S149000, C382S151000, C382S284000, C382S294000, C348S086000, C348S087000, C356S239300, C250S559040

Reexamination Certificate

active

06904164

ABSTRACT:
A method of quickly and accurately inspecting the stitching accuracy at which regions of a lithographic pattern are stitched at boundaries. The numerous regions of the lithographic pattern are exposed or delineated, one at a time. Inspected regions are scanned with a charged-particle beam to detect secondary electrons. The obtained signal is stored as an inspected image in an image memory, together with positional data about the inspected regions. After completion of acceptance of images from all the inspected regions, the inspected image is compared with a separately prepared reference image by an image processing unit. Pattern elements in the inspected regions corresponding to the reference image are extracted. Deviations at field boundaries or the like can be detected from the relative positions of these pattern elements, if any.

REFERENCES:
patent: 5023917 (1991-06-01), Bose et al.
patent: 6396943 (2002-05-01), Yamashita
patent: 6723973 (2004-04-01), Saito
“Evaluation of an advanced mask writing system”, Shinji Kubo et al., Part of the SPIE Symposium on Photomask and X-Ray Technology VI, Yokohama, Japan, Sep. 1999,SPIEvol. 3748, pp. 426-435.

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