Selective polishing with slurries containing polyelectrolytes

Details Selective polishing with slurries containing polyelectrolytes Selective polishing with slurries containing polyelectrolytes

2005-11-15

2005-11-15

Kunemund, Robert (Department: 1722)

Semiconductor device manufacturing: process

Chemical etching

C438S690000, C438S691000

Reexamination Certificate

active

06964923

ABSTRACT:
Polishing rate selectivity is increased by providing a polyelectrolyte in the polishing slurry. The polishing selectivity of silicon oxide to silicon nitride is enhanced by using an anionic polyelectrolyte. The polishing selectivity of metals to silicon oxide, silicon nitride and/or silicon oxynitride is increased by using a cationic polyelectrolyte.

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patent: 5801082 (1998-09-01), Tseng
patent: 5814236 (1998-09-01), Booth
patent: 5861055 (1999-01-01), Allman et al.
patent: 5876490 (1999-03-01), Ronay
patent: 5965465 (1999-10-01), Rath et al.
patent: 5968280 (1999-10-01), Ronay
patent: 846740 (1998-06-01), None

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