Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-11-22
2005-11-22
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S676000, C257S709000, C257S712000, C257S720000, C438S122000
Reexamination Certificate
active
06967401
ABSTRACT:
A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to this heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) and the second supporting member (24).
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Nikkei Electronics; No. 691, Jun. 16, 1997. pp. 92-120.
Igarashi Yusuke
Kobayashi Yoshiyuki
Maehara Eiju
Okada Yukio
Sakamoto Junji
Chu Chris C.
Fish & Richardson P.C.
Sanyo Electric Co,. Ltd.
Thomas Tom
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