Semiconductor device, semiconductor module and hard disk

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Reexamination Certificate

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Details

C257S676000, C257S709000, C257S712000, C257S720000, C438S122000

Reexamination Certificate

active

06967401

ABSTRACT:
A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to this heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) and the second supporting member (24).

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Nikkei Electronics; No. 691, Jun. 16, 1997. pp. 92-120.

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