Method of making a semiconductor device using a titanium-rich si

Fishing – trapping – and vermin destroying

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437192, 437200, 148DIG19, H01L 21283

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active

055255434

ABSTRACT:
In a method of forming an adhesive layer for a blanket layer filling a contact hole in a semiconductor device, a Ti film, Ti-rich TiN film or a TiSi.sub.x (x being 1.1 to 1.8) film is formed, and then a TiN (stoichiometric) film is formed. The Ti film, Ti-rich TiN film or TiSi.sub.x is annealed to be converted into TiSi.sub.2 film. The formation of the Ti film, Ti-rich TiN film or a TiSi.sub.x is performed by a continuous CVD process.

REFERENCES:
patent: 4570328 (1986-02-01), Price et al.
patent: 4663191 (1987-05-01), Choi et al.
patent: 4803127 (1989-02-01), Hakim
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 5049975 (1991-09-01), Ajika et al.
Bernard, C., et al.; "Chemical Vapor Deposition of Refractory Metal Silicides for VLSI Metallization"; Solid State Technology, Feb. 1989, pp. 79-84.

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