Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1994-12-23

1996-06-11

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 59, 437162, 437192, 148DIG9, H01L 21265

Patent

active

055255302

ABSTRACT:
The present invention is mainly characterized in that a Bi-CMOS is obtained in which characteristics of a bipolar transistor are not deteriorated. The device includes a bipolar transistor and a CMOSFET formed on a semiconductor substrate separately from each other by a field oxide film. The thickness of a gate electrode of an NMOSFET and a gate electrode of a PMOSFET is made larger than the thickness of an emitter electrode of the bipolar transistor.

REFERENCES:
patent: 4044452 (1977-08-01), Abbas et al.
patent: 4737472 (1988-04-01), Schaber et al.
patent: 4960726 (1990-10-01), Lechaton et al.
patent: 5132234 (1992-07-01), Kim et al.
patent: 5171702 (1992-12-01), Prengle et al.
HSST/BiCMOS Technology with 26ps ECL and 45ps 2V CMOS Inverter, Konaka et al., 1990 IEEE pp. 493-496.
2 Micron Merged Bipolar-CMOS Technology, Alvarez et al., 1984 IEDM pp. 761-764.
IEEE Electron Device Letters, vol. 13, No. 8, pp. 392-395 by Bashir et al., Aug. 1992.

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