Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-08-02
2005-08-02
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S046000, C438S047000, C438S048000, C438S085000, C438S093000
Reexamination Certificate
active
06924159
ABSTRACT:
To provide a semiconductor substrate of a group III nitride with low defect density and little warp, this invention provides a process comprising such steps of:forming a GaN layer2on a sapphire substrate1of the C face ((0001) face); forming a titanium film3thereon; heat-treating the substrate in an atmosphere containing hydrogen gas or a gas of a compound containing hydrogen to form voids in the GaN layer2;and thereafter forming a GaN layer4on the GaN layer2′.
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Masaru Kuramoto et al., “Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact,”Jpn. J. Appl. Phys., V. 38, 1999, pp. L184-L186.
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Oshima Yuichi
Shibata Masatomo
Usui Akira
Hitachi Cable Ltd.
Lee Hsien-Ming
NEC Corporation
Young & Thompson
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