Methods for manufacturing a light-emitting device

Details Methods for manufacturing a light-emitting device Methods for manufacturing a light-emitting device

2005-11-08

2005-11-08

Fahmy, Wael (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000, C438S036000, C438S037000, C438S046000, C438S047000

Reexamination Certificate

active

06962828

ABSTRACT:
A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength λ of emitted light.

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