Method of fabricating dielectric layer

Details Method of fabricating dielectric layer Method of fabricating dielectric layer

2005-11-15

2005-11-15

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S954000

Reexamination Certificate

active

06964930

ABSTRACT:
In fabricating a dielectric layer, a semiconductor substrate which has been washed is provided. A first nitride film is formed by loading the substrate in a first furnace and subjecting the substrate to a first nitride treatment. A first oxide film is formed by unloading the substrate having the first nitride film out of the first furnace and subjecting the substrate to a first nitride treatment by introducing air while the substrate is unloaded. A second nitride film is formed by loading the substrate having the first oxide film in a second furnace and subjecting the substrate to a second nitride treatment. A second oxide film is formed by subjecting the top surface of the second nitride film to a second oxide treatment.

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