Semiconductor device

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357 81, H01L 3902, H01L 2302

Patent

active

051384396

ABSTRACT:
A semiconductor device includes a successively disposed a radiating electrode and hard radiating layer at the rear surface of a semiconductor wafer substrate which is divided into a plurality of semiconductor chips wherein the semiconductor chip includes the hard radiating layer having outer dimensions larger than that of substrate of said semiconductor chip.

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patent: 3986196 (1976-10-01), Decker et al.
patent: 4926242 (1990-05-01), Itoh et al.
Aakalu et al., "Thermal Grease With Boron Or Aluminum Nitride And Mineral Oil", IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, p. 3530.
Mondou et al., "Heat Transfer Compound", IBM Technical Disclosure Bulletin, vol. 25, No. 10, Mar. 1983, p. 5322.
Iwase et al., "Aluminum Nitride Substrates Having High Thermal Conductivity", Solid State Technology, 1986, pp. 135-138.

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