Methods of forming semiconductor constructions

Details Methods of forming semiconductor constructions Methods of forming semiconductor constructions

2005-06-14

2005-06-14

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S780000

Reexamination Certificate

active

06905973

ABSTRACT:
The invention includes a semiconductor construction comprising a semiconductor substrate, and a first layer comprising silicon and nitrogen over the substrate. A second layer comprising at least 50 weight % carbon is over and physically against the first layer, and a third layer consisting essentially of a photoresist system is over and physically against the second layer. The invention also includes methodology for forming the semiconductor construction.

REFERENCES:
patent: 6136511 (2000-10-01), Reinberg et al.
patent: 6403280 (2002-06-01), Yamahara et al.
patent: 2002/0045130 (2002-04-01), Nitta et al.
patent: 2003/0008246 (2003-01-01), Cheng et al.
“Chemically Amplified Photoresists” , IBM: http://www.almaden.ibm.com/st/projects/sub100nm/objectives/ca/.
“Imaging of photogenerated acid in a chemically amplified photoresist” : S. J. Bukofsky et al.: 1998 American Institute of Physics, vol. 73, No. 3, Jul. 20, 1998. pp. 408-410.

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