Method and apparatus for etching Si

Details Method and apparatus for etching Si Method and apparatus for etching Si

2005-12-06

2005-12-06

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S071000, C216S079000, C438S719000, C438S729000

Reexamination Certificate

active

06972264

ABSTRACT:
A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2and NF3and a residence time τ of the etching gas is equal to or greater than about 180 msec, the residence time τ being defined as:in-line-formulae description="In-line Formulae" end="lead"?τ=pV/Qin-line-formulae description="In-line Formulae" end="tail"?where p represents an inner pressure of the processing chamber; V, an effective volume of etching space formed on the Si substrate or the Si layer; and Q, a flow rate of the etching gas.

REFERENCES:
patent: 5242536 (1993-09-01), Schoenborn
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 6322714 (2001-11-01), Nallan et al.
patent: 6562722 (2003-05-01), Kumihashi et al.
patent: 6620575 (2003-09-01), Kim et al.
patent: 6749763 (2004-06-01), Imai
patent: 2002-319569 (2002-10-01), None
“Radio Frequency Plasma Etching of Silicon/Silica By Chlorine/Oxygen: Improvemenets Resulting From Time Modulation of The Processing Gases”; Journal of Vacuum Science & Technology, B: (1990); 8(6), pp. 1185-1191; McNevin.

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