Semiconductor device manufacturing: process – Making regenerative-type switching device
Reexamination Certificate
2005-06-14
2005-06-14
Thai, Luan (Department: 2829)
Semiconductor device manufacturing: process
Making regenerative-type switching device
C438S570000, C438S582000
Reexamination Certificate
active
06905916
ABSTRACT:
A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.
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Bartsch Wolfgang
Rupp Roland
Treu Michael
Mayback Gregory L.
Thai Luan
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