Method of manufacturing a solid-state imaging device

Details Method of manufacturing a solid-state imaging device Method of manufacturing a solid-state imaging device

2005-02-01

2005-02-01

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000, C438S144000

Reexamination Certificate

active

06849476

ABSTRACT:
A frame transfer-type solid imaging device is provided, which can be operated without reducing the transfer efficiency or the transfer charge quantity. A plurality of N-type regions5constituting photoelectric conversion regions and a plurality of P+-type regions6constituting channel stop regions are formed on a P-type silicon substrate4, and a transparent electrode1is further formed through an insulating film7on the substrate4. The thickness of the transparent electrode at a portion above the photoelectric conversion region is made thinner than the thickness of the other part of the transparent electrode1, and an antireflection film8is formed above the photoelectric conversion region2.

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