Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2005-08-02
2005-08-02
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S051000, C438S055000, C438S598000
Reexamination Certificate
active
06924165
ABSTRACT:
A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.
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International Search Report dated Jul. 16, 2004, Application No. PCT/US 2004/007277; 7 pages.
Horning Robert D.
Ridley Jeffrey A.
Honeywell International , Inc.
Luxton, Esq. Matthew
Nguyen Tuan H.
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