Protective structures for bond wires

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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C257S673000, C257S668000, C257S678000, C257S691000, C257S698000, C257S730000, C257S734000, C257S737000, C257S738000, C257S784000, C257S786000, C257S787000

Reexamination Certificate

active

06963127

ABSTRACT:
Protective structures for bond wires or other intermediate conductive elements of a semiconductor device assembly cover the intermediate conductive elements without covering a substantial portion of a semiconductor device from which the intermediate conductive elements extend. In addition to coating at least portions of one or more intermediate conductive elements, the protective structure may include a fence which is configured to receive a semiconductor device. Such a fence may be formed integrally with the remainder of the protective structure or a separately formed member. The protective structures may be formed from a photopolymer material which has been at least partially cured, for example, by stereolithography processes. Accordingly, the protective structures may include a single layer or a plurality of superimposed, contiguous, mutually adhered layers.

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