Patent
1990-10-16
1992-08-11
Prenty, Mark V.
357 59, 357 2, 357 34, H01L 2712, H01L 2904, H01L 4500, H01L 2972
Patent
active
051384213
ABSTRACT:
The semiconductor substrate according to the present invention comprises a first semiconductor layer, an insulation layer formed on said first semiconductor layer, a buffer layer formed on said insulation layer having at least one of getter ability and layer distortion buffering ability, and a second semiconductor layer formed on said buffer layer.
REFERENCES:
patent: 4987471 (1991-01-01), Easter et al.
Kabushiki Kaisha Toshiba
Prenty Mark V.
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