Transistor structure for testing emitter-base junction

Details Transistor structure for testing emitter-base junction Transistor structure for testing emitter-base junction

1990-06-01

1992-08-11

James, Andrew J.

357 34, 357 36, 357 46, 357 51, H01L 2972, H01L 2702

Patent

active

051384183

ABSTRACT:
In accordance with the present invention, a metal electrode in contact with a resistive region formed in a base region is spaced from either a base bonding pad or an emitter electrode. The metal electrode is connected with the pad or the emitter electrode by a lead wire that is rigidly fixed to the pad or the emitter electrode. Before the lead wire is rigidly fixed, no resistor is connected between the emitter and the base. Therefore, it is possible to precisely determine whether the emitter-base junction is good or bad. Further, the invention can be practiced without adding any special manufacturing steps to the prior art techniques. Hence, inexpensive and highly reliable transistors can be put on the market.

REFERENCES:
patent: 4782378 (1988-11-01), Sekiya et al.
"Microelectronic processing"; W. Scot Ruska; 1987; pp. 9-14.

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