Semiconductor device having low-K insulating film

Details Semiconductor device having low-K insulating film Semiconductor device having low-K insulating film

2005-06-07

2005-06-07

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S760000

Reexamination Certificate

active

06903445

ABSTRACT:
Disclosed is a semiconductor device having a dielectric film of a stacked structure, comprising a low dielectric constant film containing silicon, oxygen and carbon a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine and a dielectric protection film formed successively on a semiconductor substrate, the semiconductor device being manufactured by applying a plasma treatment using a fluorine-containing gas to the surface of an organic siloxane film to form a modified layer and then forming a dielectric protection film, which can improve the adhesivity with the dielectric protection film without increasing the dielectric constant of the organic siloxane film to prevent delamination.

REFERENCES:
patent: 4770923 (1988-09-01), Wasa et al.
patent: 6235648 (2001-05-01), Mizuhara et al.
patent: 6255732 (2001-07-01), Yokoyama et al.
patent: 6531714 (2003-03-01), Bacchetta et al.
patent: 6627532 (2003-09-01), Giallard et al.
patent: 2000-58536 (2000-02-01), None
patent: 2000-106364 (2000-04-01), None
Proceedings of International Interconnect Technology Conference, 1999, pp. 190-192.

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