Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-02-15
2005-02-15
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257S066000, C438S149000, C438S151000, C438S157000
Reexamination Certificate
active
06855954
ABSTRACT:
The present invention relates to a thin film transistor, a fabrication method thereof and a liquid crystal display having the thin film transistor, and an object of the present invention is to provide a thin film transistor which improves a fabrication yield, a fabrication method thereof and a liquid crystal display having the thin film transistor. In a bottom-gate-type thin film transistor1having a gate electrode4formed on a substrate, a gate insulating film6formed on the gate electrode, an operational semiconductor film8formed on the gate insulating film6on the gate electrode4, a channel protection film3formed on the operational semiconductor film, and a source and a drain electrodes14and15formed on both sides of the top surface of the channel protection film3connected to the operational semiconductor film with the operational semiconductor, and the channel protection film3has a first insulating layer10contacting to an upper interface of the operational semiconductor film8and a second insulating layer11formed on the first insulating layer.
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Fujitsu Display Technologies Corporation
Greer Burns & Crain Ltd.
Lee Eddie
Owens Douglas W.
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