Nitride based semiconductor structures with highly...

Details Nitride based semiconductor structures with highly... Nitride based semiconductor structures with highly...

2005-11-22

2005-11-22

Porta, David (Department: 2878)

Coherent light generators

Particular active media

Semiconductor

C372S045013

Reexamination Certificate

active

06967981

ABSTRACT:
A nitride based resonant cavity semiconductor structure has highly reflective mirrors on opposite sides of the active layer. These highly reflective mirrors can be distributed Bragg reflectors or metal terminated layer stacks of dielectric materials. The nitride based resonant cavity semiconductor structure can be vertical cavity surface emitting laser (VCSEL), a light emitting diode (LED), or a photodetector (PD), or a combination of these devices.

REFERENCES:
patent: 5425042 (1995-06-01), Nido et al.
patent: 5729566 (1998-03-01), Jewell
patent: 5764675 (1998-06-01), Juhala
patent: 5812576 (1998-09-01), Bour
patent: 5838707 (1998-11-01), Ramdani et al.
patent: 5877519 (1999-03-01), Jewell
patent: 5978401 (1999-11-01), Morgan
patent: 6148016 (2000-11-01), Hegblom et al.
patent: 6163557 (2000-12-01), Dunnrowicz et al.
patent: 6252894 (2001-06-01), Sasanuma et al.
patent: 6320206 (2001-11-01), Coman et al.
patent: 6365429 (2002-04-01), Kneissl et al.
patent: 6393038 (2002-05-01), Raymond et al.
patent: 6408015 (2002-06-01), Kaneko
patent: 6448102 (2002-09-01), Kneissl et al.
patent: 6455340 (2002-09-01), Chua et al.
patent: 6483127 (2002-11-01), Saeki
patent: 6639927 (2003-10-01), Sato et al.
patent: 6711192 (2004-03-01), Chikuma et al.
patent: 6744800 (2004-06-01), Kneissl et al.
patent: 6757314 (2004-06-01), Kneissl et al.
patent: 0 896 405 (1999-02-01), None
patent: 2 346 478 (2000-08-01), None
Communication from European Patent Office re Application No. 02258579.8-1235, dated Nov. 4, 2004, including European Search Report and Annex to the European Search Report.
Mathine, D.L., Nejad, H., Allee, D.R., Droopad, R., Maracas, G.N., “Reduction of the Thermal Impedance of Vertical-Cavity Surface-Emitting Lasers After Integration with Copper Substrates”, Applied Physics Letters, vol. 69, No. 4, Jul. 22, 1996, pp. 463-464.

Affiliated with

Also associated with

Rating

Nitride based semiconductor structures with highly... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride based semiconductor structures with highly..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride based semiconductor structures with highly... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3503961