Method for recovering a plasma process

Semiconductor device manufacturing: process – Including control responsive to sensed condition

Reexamination Certificate

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C438S007000, C438S009000, C438S010000, C438S706000, C438S710000

Reexamination Certificate

active

06927076

ABSTRACT:
A method for automated monitoring and controlling of a semiconductor wafer plasma process including performing a plasma process in a plasma processing system to treat a semiconductor process wafer according to a first plasma process recipe; collecting plasma process parameters including at least an RF power and a plasma process time at pre-determined time intervals; and, storing the plasma process parameters including pre-process plasma processing system parameters according to a selectively queryable database to create a plasma process history such that upon abortion of the plasma process the plasma process history may be selectively retrieved to determine a second plasma process recipe to complete the plasma process.

REFERENCES:
patent: 6582618 (2003-06-01), Toprac et al.
patent: 6745095 (2004-06-01), Ben-Dov et al.

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